SML2308CSM4 v ds drain ? source voltage v gs gate ? source voltage i d continuous drain current @t a = 25c i dm pulsed drain current 1 p d power dissipation @t a = 25c @t a = 100c r ja thermal resistance junction to ambient t stg , t j maximum junction and storage temperature range 60v 20v 2a 10a 0.8w 0.32w 156c/w -55 to +150c mechanical data dimensions in mm (inches) 1 2 3 4 5.59 0.13 (0.22 0.005) 0.23 (0.009) rad. 1.02 0.20 (0.04 0.008) 2.03 0.20 (0.08 0.008) 1.40 0.15 (0.055 0.006) 0.25 0.03 (0.01 0.001) 0.23 (0.009) min. 1.27 0.05 (0.05 0.002) 3.81 0.13 (0.15 0.005) 0.64 0.08 (0.025 0.003) n?channel enhancement mode mosfet lcc3 package (mo-041ba) underside view absolute maximum ratings (t a = 25 c unless otherwise stated) note: 1) repetitive rating: pulse width limited by maximum junction temperature. pad 1 - drain pad 2 - n/c pad 3 - source pad 4 - gate the SML2308CSM4 is a very low on state resistance n-channel enhancement mode mosfet in a ceramic surface mount pack- age designed for high rel applications: features b vdss =60v i d = 2a r ds(on) = 0.16 ? hermetic surface mount package screening option available document number 5331 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders.
SML2308CSM4 characteristic test conditions min. typ. max. unit v (br)dss v gs(th) i gss i dss i d(on) r ds(on) g fs v sd q g q gs q gd c iss c oss c rss t d(on) t r t d(off) t f 60 1.5 100 0.5 10 6 4 0.15 0.2 0.20 0.25 4.6 0.77 1.2 4.8 10 0.8 1.0 240 50 15 715 10 20 17 35 615 drain ? source breakdown voltage gate threshold voltage gate ? source leakage current zero gate voltage drain current on state drain current 1 drain source on-state resistance 1 forward transconductance 1 diode forward voltage 1 total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn ? on delay time rise time turn ? off delay time fall time v gs = 0v i d = 250 a v ds = v gs i d = 250 a v gs = 20v v gs = 0v v ds = 60v v gs = 0v t j = 55 c v ds = 4.5v v gs = 10v v ds = 4.5v v gs = 4.5v v gs = 10v i d = 2.0a v gs = 4.5v i d = 1.7a v ds = 4.5v i d = 2.0a v gs = 0v i s = 1.0a v gs = 10v v ds = 30v i d = 2.0a v gs = 0v v ds = 25v f = 1mhz v dd = 30v r l = 30 ? i d = 1a r g = 6 ? v gen = 4.5v v na a a ? s v nc pf ns electrical ratings (t a = 25 c unless otherwise stated) notes: 1) pulse test: pulse width = 300 s , duty cycle 2% static characteristics dynamic characteristics switching characteristics document number 5331 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders.
|
